TPS54331DTIStep-Down Regulator 3A, 28V Input, 570kHz Step Down SWIFT DC-DC Converter with Eco-mode Conv DC-DC 3.5V to 28V Step Down Single-Out 0.8V to 25V 3A 8Pin SOIC Tube
￥
13.57
显示的图像仅供参考，应从产品数据表中获得准确的规格。
TPS54331DTI
制造商:
TI
制造商型号#:
TPS54331D
百芯编号#:
CM1578163
价格(CNY):
￥
13.57
百芯库存:
1,297
个
库存地点:香港
可供应量:
679
个在库
此为供应商库存，需要与销售确认
产品类别:
DCDC,转换器,DC-DC
产品描述:
Step-Down Regulator 3A, 28V Input, 570kHz Step Down SWIFT DC-DC Converter with Eco-mode Conv DC-DC 3.5V to 28V Step Down Single-Out 0.8V to 25V 3A 8Pin SOIC Tube
The TPS54331D is a 3A 570kHz Step-down Converter with Eco-mode™ that integrates a low RDS (ON) high-side MOSFET. To increase efficiency at light loads, a pulse skipping Eco-mode™ feature is automatically activated. Furthermore, the 1µA shutdown supply current allows the device to be used in battery powered applications. Current mode control with internal slope compensation simplifies the external compensation calculations and reduces component count while allowing the use of ceramic output capacitors. A resistor divider programs the hysteresis of the input under-voltage lockout. An overvoltage transient protection circuit limits voltage overshoots during start-up and transient conditions. A cycle-by-cycle current limit scheme, frequency fold back and thermal shutdown protect the device and the load in the event of an overload condition. The TPS54331 device has been internally optimized to improve thermal performance.
Adjustable output voltage down to 0.8V
Integrated 80mR high-side MOSFET supports up to 2A continuous output current
High efficiency at light loads with a pulse skipping Eco-mode™
1µA Typical shutdown quiescent current
Adjustable slow-start limits inrush currents
Programmable UVLO threshold
Overvoltage transient protection
Cycle-by-cycle current limit, frequency fold back and thermal shutdown protection
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
