DrMOS 4.0 x 4.0 x 1.0 mm³ offers best-in-class efficiency and very low power loss. Infineon can deliver these benefits by combining its latest generation 25V OptiMOS™ 5 MOSFET technologies with its proven MOSFET driver silicon. A significant reduction of switching losses enables superior efficiency at higher switching frequencies. Higher switching frequency operation, combined with an extremely small package, enables system designers to save board space and still deliver superior performance.
Summary of Features:
Small 4.0 x 4.0 x 1.0mm³ PQFN package
Fast switching technology for improved performance at high switching frequency (> 500kHz)
Recommended input voltage 4.5V to 16V
Undervoltage lockout › Shoot through protection
5V driver voltage optimized
Compatible with standard 3.3V PWM
Benefits:
Peak efficiency > 94%
Integrated bootstrap diode (no need of external diode)
