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SN74CBTD3305C 库存 & 价格

TI Dual FET Bus Switch with -2V Undershoot-Protection and Level Shifting
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SN74CBTD3305C TI
TI
  • 制造商:
    TI
  • 制造商型号#:
    SN74CBTD3305C
  • 百芯编号#:
    CM392786902
  • 价格(CNY):
  • 百芯库存:
    271
  • 可供应量:
    163 个在库
    此为供应商库存,需要与销售确认
  • 产品描述:
    Dual FET Bus Switch with -2V Undershoot-Protection and Level Shifting
  • 文档: 符合 RoHS 标准 3D模型
SN74CBTD3305C 购买 SN74CBTD3305C 库存和价格更新于 2025-06-16 03:50:22
  • 刷新
    器件型号: SN74CBTD3305C
    百芯编号: CM392786902
    制造商: TI
    价格
    总计: 434
    MOQ: 1
    库存地点: 香港
    发货日期: 2025/06/21 (预期 )
  • 购买
    *由于库存数量、价格不断波动,请 联系我们 获取型号最新价格和库存。

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    SN74CBTD3305C 规格 显示相似产品 (99+)
    类型
    描述
    选择
    制造商
    TI
    封装
    TSSOP-8
    3D模型
     3D模型
    显示相似产品
    SN74CBTD3305C 数据规格书
    SN74CBTD3305C 数据手册Datasheet
    16 Pages, 470 KB
    2012/04/03
    查看
    符合标准
    类型
    描述
    RoHS标准
    RoHS Compliant
    含铅标准
    Lead Free
    产品概述
    • The SN74CBTD3305C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3305C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.
    • The SN74CBTD3305C is organized as two 1-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is high, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.
    • This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.
    • To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver.
    • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
    • Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
    • Bidirectional Data Flow, With Near-Zero Propagation Delay
    • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
    • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
    • Data and Control Inputs Provide Undershoot Clamp Diodes
    • VCC Operating Range From 4.5 V to 5.5 V
    • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
    • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
    • Ioff Supports Partial-Power-Down Mode Operation
    • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
    • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
    • Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

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