This specially engineered NPN SMBTA06E6433HTMA1 GP BJT from Infineon Technologies comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 4 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
