The S29GL128S90TFI010 is a 128MB MirrorBit® Eclipse™ Flash Non-Volatile Memory fabricated on 65nm process technology. This device offers a fast page access time as fast as 90ns with a corresponding random access time as fast as 90ns. They feature a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.
Highest address sector protected
Versatile I/O™ - Wide I/O voltage range of 1.65V to VCC
Asynchronous 32-byte page read
Suspend and resume commands for program and erase operations
Status register, data polling and ready/busy pin methods to determine device status
Advanced sector protection - Volatile and non-volatile protection methods for each sector