The NTJS4151PT1G is a P-channel single Trench Power MOSFET offers -20V drain source voltage and -3.3A continuous drain current. It is suitable for use as high side load switches, cell phones, computing, digital cameras, MP3s and PDAs.
Leading Trench technology for low RDS (ON) extending battery life
Small outline (2 x 2 mm) for maximum circuit board utilization