The NTD20N03L27T4G is a N-channel logic level vertical general purpose Power MOSFET provides the best of design in a power package. Avalanche energy issues make this part is an ideal design. The drain-to-source diode has an ideal fast but soft recovery.
Ultra-low RDS (ON), single base, advanced technology
Diode is characterized for use in bridge circuits
IDSS and VDS (ON) Specified at elevated temperatures
High avalanche energy specified
ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0