Compared to other transistors, the NPN NSS1C201MZ4T1G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.