IGBT, SINGLE, 600V, 100A, TO-247; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:223W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:3; Operating Temperature Max:150℃ ;RoHS Compliant: Yes
The NGTG50N60FWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and Trench construction, provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Optimized for very low collector-to-emitter saturation voltage