The NGTB20N120LWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective field-stop (FS) Trench construction, provides superior performance in demanding switching applications, offering both low ON-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.
Low saturation voltage using Trench with field-stop technology
Low switching loss - Reduces system power dissipation