This P-Channel enhancement mode power field effect transistor is produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0605 can be used, with a minimum of effort, in most applications requiring up to 0.18A DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
Features
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-0.18 A, -60 V. RDS(ON) = 5 Ω @ VGS= -10 V.
Voltage controlled p-channel small signal switch.
High density cell design for extremely low RDS(ON).
