The NDP6060L is a logic level N-channel enhancement-mode power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
Low drive requirements allowing operation directly from logic drivers
Critical DC electrical parameters specified at elevated temperature
High density cell design for extremely low RDS (ON)