The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an output device in complementary general purpose amplifier applications.
Collector to emitter voltage (Vce) of -120V
Collector current (Ic) of -30A
Power dissipation of 200W
Operating junction temperature range from -55°C to 200°C
Collector emitter breakdown Voltage of -120V
Collector emitter saturation voltage of -3V at 20A collector current