Single 2−Input NAND Gate with Open Drain Output ;Features High Speed: tPD = 3.7ns (Typ) at VCC = 5V Low Internal Power Dissipation: ICC = 2µA (Max) @TA = 25°C Power Down Protection Provided on Inputs Pin and Function Compatible with Other Standard Logic Families Latchup Performance Exceeds 300mA ESD Performance: HBM > 2000V; MM > 200V, CDM > 1500V