The M25P80-VMN6P is an 8MB (1Mb x 8) serial flash embedded memory device in 8 pin NSOIC package. It features advanced write protection mechanism accessed by high speed SPI compatible bus. The device supports high performance commands for clock frequency up to 75MHz. The memory can be programmed 1 to 256 bytes at a time using PAGE PROGRAM command. It is organized as 16 sectors each containing 256 pages. Each page is 256bytes wide. Memory can be viewed either as 4096 pages or as 1,048,576bytes. The entire memory can be erased using BULK ERASE command or it can be erased one sector at a time using SECTOR ERASE command.
Single supply voltage range from 2.7V to 3.6V
Page program (up to 256bytes) in 0.64ms
Sector erase of 512KB in 0.6s
Bulk erase of 8MB in 8s
Hardware write protection, protected area size defined by nonvolatile bits BP0, BP1, BP2
Deep power down of 1µA
JEDEC standard 2byte signature (2014h)
More than 100000 write cycles per sector and more than 20 years data retention
