The IRG4PC30KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.
Combines low conduction losses with high switching speed
Tighter parameter distribution and higher efficiency than previous generations
IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes
Latest generation 4 IGBTs offer highest power density motor controls possible