The IRFS4229PBF is a HEXFET® single N-channel Power MOSFET designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Advanced process technology
Low Qg for fast response
High repetitive peak current capability for reliable operation
Short fall and rise times for fast switching
Repetitive avalanche capability for robustness and reliability