The IRFP4229PBF is a HEXFET® single N-channel PDP switch Power MOSFET specifically designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. It combines to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Advanced process technology
Low EPULSE rating to reduce power dissipation
Low Qg for fast response
High repetitive peak current capability for reliable operation
Short fall and rise times for fast switching
Repetitive avalanche capability for robustness and reliability