Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on)60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It"s unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
