The IPB65R045C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFET offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Increased dV/dt ruggedness
Better efficiency due to best in class FOM RDS (ON) x Eoss and RDS (ON) x Qg
Best in class RDS (ON)
Easy to use/drive
Halogen-free
Enabling higher system efficiency
Enabling higher frequency
Increased power density solutions
Size savings due to reduced cooling requirements
Higher system reliability due to lower operating temperatures
Reduced energy stored in output capacitance(Eoss)
Low switching losses
Outstanding CoolMOS™ quality
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.