* Infineon reverse conducting IGBTs with monolithic body diode * Rugged SOI gate driver technology with stability against transient and negative voltage * Allowable negative VS potential up to -11V for signal transmission at VBS=15V * Integrated bootstrap functionality * Over current shutdown * Temperature monitor Under-voltage lockout at all channels * Low side emitter pins accessible for all phase current monitoring (open emitter) * Cross-conduction prevention * All of 6 switches turn off during protection * Lead-free terminal plating; RoHS compliant