The IDH10S120 is a thinQ!™ 2nd generation 1200V SiC Schottky Diode with revolutionary semiconductor material silicon carbide. It is the highest voltage family of Infineon SiC Schottky discrete diodes and is now being extended with the TO-247 package. The very good thermal characteristics of the TO-247 in combination with the low Vf of the 1200V diodes make it particularly suitable in power applications where relatively high currents are demanded and utmost efficiency is required. With the introduction of this package, Infineon now offers a current capability of up to 30A in the 1200V range. It offers benchmark switching behaviour, no reverse recovery/no forward recovery and high surge current capability. It is used in motor drives, solar applications, UPS, SMPS (CCM, PFC), server, telecom and AC-DC applications.
Temperature independent switching behaviour
Pb-free lead plating
Qualified according to JEDEC for target applications
Breakdown voltage tested at 20mA
Optimized for high temperature operation
Lowest Figure of Merit QC/IF
System efficiency improvement compared to Si diodes
Reduced cooling requirements
Enabling higher frequency/increased power density
Higher system reliability due to lower operating temperature