The HMC7229LS6 is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 1 W power amplifier, with an integrated temperature compensated on-chip power detector that operates between 37 GHz to 40 GHz. The HMC7229LS6 provides 24 dB of gain and 32 dBm of saturated output power at 18% PAE at 39 GHz from a 6 V supply. With an excellent IP3 of 40 dBm, the HMC7229LS6 is ideal for linear applications such as high capacity, point to point or multipoint radios or VSAT/SATCOM applications demanding 32 dBm of efficient saturated output power. The radio frequency (RF) input/outputs are internally matched and dc blocked for ease of integration into higher level assemblies. The HMC7229LS6 is housed in a ceramic, 6 mm × 6 mm, high frequency, air cavity package that exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques.
Applications
Point to point radios
Point to multipoint radios
Very small aperture terminal (VSAT) and satellite communications (SATCOM)
### Features and Benefits
32 dBm typical saturated output power (PSAT) at 18% power added efficiency (PAE) at 39 GHz
P1dB compression output power: 31.5 dBm typical
High output third-order intercept (IP3): 40 dBm typical
High gain: 24 dB typical
50 Ω matched input/output
Ceramic, 6 mm × 6 mm, high frequency, air cavity package
