The GAL22V10, at 4ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance available of any 22V10 device on the market. CMOS circuitry allows the GAL22V10 to consume much less power when compared to bipolar 22V10 devices. E2 technology offers high speed (<100ms) erase times, providing the ability to reprogram or reconfigure the device quickly and efficiently.
Features
• HIGH PERFORMANCE E2CMOS®TECHNOLOGY
— 4 ns Maximum Propagation Delay
— Fmax = 250 MHz
— 3.5 ns Maximum from Clock Input to Data Output
— UltraMOS®Advanced CMOS Technology
• ACTIVE PULL-UPS ON ALL PINS
• COMPATIBLE WITH STANDARD 22V10 DEVICES
— Fully Function/Fuse-Map/Parametric Compatible with Bipolar and UVCMOS 22V10 Devices
