This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild"s Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 10V).
Features
· 4.5 A, 20 V. RDS(ON)= 32 mW@ VGS= 4.5 V
RDS(ON)= 45 mW@ VGS= 2.5 V
· Optimized for use in battery circuit applications
· Extended VGSSrange (±10V) for battery applications
· High performance trench technology for extremely low RDS(ON)