This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Features
Max rDS(on)= 7.5 mΩat VGS= 10 V, ID= 13 A
Max rDS(on)= 13 mΩat VGS= 4.5 V, ID= 10 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery.