The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range of applications. The device is based upon Infineon Technologies cost effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package
Summary of Features:
High performance general purpose wide band MMIC LNA
ESD protection integrated for all pins (3 kV for RF input vs. GND, 2 kV for all other pin combinations, HBM)
Integrated active biasing circuit enables stable operation point against temperature- and processing-variations
Excellent noise figure from Infineon´s reliable high volume SiGe:C technology
High gain and linearity at low current consumption
Operation voltage: 1.8 V to 4.0 V
Adjustable operation current 2.1 mA to 25 mA by external resistor
Power-off function
Very small and leadless package TSLP-7-1, 2.0 x 1.3 x 0.4 mm3
Pb-free (RoHS compliant) and halogen-free (WEEE compliant) package Applications
