The AT45DB041E is a 1.65V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB041E also supports the RapidS serial interface for applications requiring very high speed operation. Its 4,194,304 bits of memory are organized as 2,048 pages of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB041E also contains two SRAM buffers of
256/264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a system"s ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pad memory, and EEPROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.
Features
Single 1.65V - 3.6V supply
Serial Peripheral Interface (SPI) compatible
Supports SPI modes 0 and 3
Supports RapidS™ operation
Continuous read capability through entire array
Up to 85MHz
Low-power read option up to 15 MHz
Clock-to-output time (tV) of 6ns maximum
User configurable page size
256 bytes per page
264 bytes per page (default)
Page size can be factory pre-configured for 256 bytes
Two fully independent SRAM data buffers (256/264 bytes)
Allows receiving data while reprogramming the main memory array
Flexible programming options
Byte/Page Program (1 to 256/264 bytes) directly into main memory
Buffer Write
Buffer to Main Memory Page Program
Flexible erase options
Page Erase (256/264 bytes)
Block Erase (2KB)
Sector Erase (64KB)
Chip Erase (4-Mbits)
Program and Erase Suspend/Resume
Advanced hardware and software data protection features
Individual sector protection
Individual sector lockdown to make any sector permanently read-only
