You won"t need to worry about any lagging in your circuit with this APT75GN60LDQ3G IGBT transistor from Microsemi. Its maximum power dissipation is 536000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.