The ADG636 is a monolithic device, comprising two indepen-dently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions.
The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V.
This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 Ω typical, which is matched to within 2 Ω between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds.
The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package.
**Product Highlights**
1. Ultralow charge injection. QINJ: ±1.5 pC typical over the full signal range
2. Leakage current <0.25 nA maximum at 85°C
3. Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply
