The 2N2369 from Multicomp is a through hole, silicon planar epitaxial NPN high speed switching transistors in TO-18 metal can package. This transistor features fast switching, short turn off and low saturation voltage. Typical application are low power, high speed saturated switching.
Collector emitter voltage (Vce) of 15V
Continuous collector current (Ic) of 200mA
Power dissipation of 360mW
Operating junction temperature range from -65°C to 200°C
Collector emitter saturation voltage is less than 250mV at Ic=10mA
