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TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Wide Range of Supply Voltages Over
Specified Temperature Range:
T
A
= –40°C to 85°C...2 V to 8 V
D
Fully Characterized at 3 V and 5 V
D
Single-Supply Operation
D
Common-Mode Input-Voltage Range
Extends Below the Negative Rail and up to
V
DD
–1 V at 25°C
D
Output Voltage Range Includes Negative
Rail
D
High Input Impedance...10
12
Ω Typ
D
Low Noise...25 nV/√Hz Typically at
f = 1 kHz (High-Bias Mode)
D
ESD-Protection Circuitry
D
Designed-In Latch-Up Immunity
D
Bias-Select Feature Enables Maximum
Supply Current Range From 17 µA to
1.5 mA at 25°C
1
2
3
4
8
7
6
5
OFFSET N1
IN–
IN+
GND
BIAS SELECT
V
DD
OUT
OFFSET N2
D OR P PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
OFFSET N1
IN–
IN+
GND
BIAS SELECT
V
DD
OUT
OFFSET N2
PW PACKAGE
(TOP VIEW)
description
The TLV2341 operational amplifier has been specifically developed for low-voltage, single-supply applications
and is fully specified to operate over a voltage range of 2 V to 8 V. The device uses the Texas Instruments
silicon-gate LinCMOS technology to facilitate low-power, low-voltage operation and excellent offset-voltage
stability. LinCMOS technology also enables extremely high input impedance and low bias currents allowing
direct interface to high-impedance sources.
The TLV2341 offers a bias-select feature, which allows the device to be programmed with a wide range of
different supply currents and therefore different levels of ac performance. The supply current can be set at
17 µA, 250 µA, or 1.5 mA, which results in slew-rate specifications between 0.02 and 2.1 V/µs (at 3 V).
The TLV2341 operational amplifiers are especially well suited to single-supply applications and are fully
specified and characterized at 3-V and 5-V power supplies. This low-voltage single-supply operation combined
with low power consumption makes this device a good choice for remote, inaccessible, or portable
battery-powered applications. The common-mode input range includes the negative rail.
The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The
TLV2341 incorporates internal ESD-protection circuits that prevents functional failures at voltages up to
2000 V as tested under MIL-STD 883 C, Methods 3015.2; however, care should be exercised in handling these
devices as exposure to ESD may result in the degradation of the device parametric performance.
AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
T
A
V
IO
max
AT 25°C
SMALL
OUTLINE
(D)
PLASTIC
DIP
(P)
TSSOP
(PW)
CHIP
FORM
(Y)
–40°C to 85°C 8 mV TLV2341ID TLV2341IP TLV2341IPWLE TLV2341Y
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLV2341IDR).
The PW package is only available left-end taped and reeled (e.g., TLV2341IPWLE).
Copyright 1994, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
LinCMOS is a trademark of Texas Instruments Incorporated.
