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NE57814DD
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NE57814DD 产品设计参考 - NXP

  • 制造商:
    NXP
  • 分类:
    电源,稳压器
  • 封装
    HLSOP
  • 描述:
    DDR Memory Termination Regulator 8Pin HSO
更新时间: 2025-06-18 21:55:57 (UTC+8)

NE57814DD 产品设计参考

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1. Introduction
The NE57810TK is designed to provide power for termination of a Double Data Rate
(DDR) SDRAM memory bus. It significantly reduces parts count, board space, and overall
system cost compared to previous solutions.
2. General description
The NE57810TK DDR termination regulator maintains an output voltage (DDR reference
bus voltage) that is half the RAM supply voltage. It is capable of providing up to 3.5 A for
sustained periods. Overcurrent limiting protects the NE57810TK from inrush currents at
start-up. Overtemperature shutdown protects the device in extreme temperature
situations.
The package is thermally robust for flexibility of thermal design. The NE57810TK is a
linear regulator so no external inductors or switching FETs are necessary. Fast response
to load changes reduces the need for output capacitors.
3. Features and benefits
Fast transient response time
Overtemperature protection
Overcurrent protection
Commercial (0 C to +70 C) temperature range
Reduced need for external components (switching FETs, inductors, decoupling
capacitors)
Internal divider maintains termination voltage at half the memory supply voltage
Reference out for other memory and control components
Optional external voltage reference in for flexible application
Compatible with DDR-I (V
DD
= 2.5 V) or DDR-II (V
DD
= 1.8 V) SDRAM systems
4. Applications
Desktop microcomputer systems
Workstations
Servers
Game machines
Set top boxes
Embedded systems
NE57810TK
Advanced DDR memory termination power with external
reference voltage in
Rev. 5 — 9 January 2013 Product data sheet

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