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LM5114BSDEVAL/NOPB
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LM5114BSDEVAL/NOPB 产品设计参考 - TI

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LM5114BSDEVAL/NOPB 产品设计参考

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User's Guide
SNVA625January 2012
AN-2206 LM5114 Evaluation Board
1 Introduction
The LM5114 is a single low-side gate driver with 7.6A/1.3A peak sink/source drive current capability. It
can be used to drive standard Si MOSFETs or enhancement mode GaN FETs in boost type configurations
or to drive secondary synchronous FETs in isolated topologies. The LM5114 evaluation board is designed
to provide the design engineer with a fully functional boost dc-dc converter to evaluate the LM5114. A
100V enhancement mode GaN FET (EPC2001) is used as the boost power switch. The control circuitry is
implemented with the LM5020, a 100V current mode PWM controller.
The specifications of the evaluation board are as follows:
Input Operating Voltage: 24V to 66V
Output Voltage: 75V
Output Current: 2A
Measured Efficiency at 48V: 97% @ 2A
Frequency of Operation: 500 kHz
Line UVLO: 23.6V (Rising) /21.6V (Falling)
Board size: 2.99 x 3.26 inches
The printed circuit board consists of 2 layers of 2 ounce copper on FR4 material, with a thickness of 0.050
inches.
2 LM5114 Features
Independent source and sink outputs for controllable rise and fall times
+4V to +12.6V single power supply
7.6A/1.3A peak sink/source drive current
0.23 open-drain pull-down sink output
2 open-drain pull-up source output
Power-off pull-down clamping
12ns (Typ) propagation delay
Matching delay time between inverting and non-inverting inputs
Up to +14V logic inputs (Regardless of VDD voltage)
-40°C to +125°C operating temperature range
Pin-to-Pin compatible with MAX5048
3 Package
SOT-23-6
LLP-6 (3mm x 3mm)
All trademarks are the property of their respective owners.
1
SNVA625January 2012 AN-2206 LM5114 Evaluation Board
Submit Documentation Feedback
Copyright © 2012, Texas Instruments Incorporated
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LM5114BSDEVAL/NOPB 数据手册 PDF

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