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ZXMN3A04DN8TA 应用笔记 - Diodes

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ZXMN3A04DN8TA 应用笔记

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ZXMN3A04K
Document number: DS33534 Rev. 2 - 2
1 of 7
www.diodes.com
October 2014
© Diodes Incorporated
ZXMN3A04K
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
30V
20mΩ @ V
GS
= 10V
18.4A
30mΩ @ V
GS
= 4.5V
15.0A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Backlighting
DC-DC Converters
Power Management Functions
Ordering Information (Note 4)
Part Number
Case
Packaging
ZXMN3A04KTC
TO252
2500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Green
Equivalent Circuit
Pin Out Top View
Top View
ZXMN3A04 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 to 53)
YYWW
3A04
ZXMN
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