Datasheet
数据手册 > FET,驱动器 > ST Microelectronics > VND810TR-E 数据手册PDF > VND810TR-E 应用笔记 第 1/34 页

VND810TR-E 应用笔记 - ST Microelectronics

更新时间: 2025-05-19 23:58:51 (UTC+8)

VND810TR-E 应用笔记

页码:/34页
下载 PDF
重新加载
下载
This is information on a product in full production.
October 2013 DocID13342 Rev 7 1/34
VND5004A-E
VND5004ASP30-E
Double 4mΩ high- side driver with analog current sense
for automotive applications
Datasheet
-
production data
Features
General
Inrush current active management by
power limitation
Very low stand-by current
3.0V CMOS compatible input
Optimized electromagnetic emission
Very low electromagnetic susceptibility
In compliance with the 2002/95/EC
European directive
Diagnostic functions
Proportional load current sense
Current sense disable
Thermal shutdown indication
Protection
Undervoltage shut-down
Overvoltage clamp
Load current limitation
Thermal shut down
Self limiting of fast thermal transients
Protection against loss of ground and loss
of V
CC
Reverse battery protection with self switch
on of the PowerMOS
Electrostatic discharge protection
Applications
All types of resistive, inductive and capacitive
loads
Suitable for power management applications
Description
The VND5004ATR-E and VND5004ASP30-E are
devices made using STMicroelectronics VIPower
technology. They are intended for driving resistive
or inductive loads with one side connected to
ground. Active V
CC
pin voltage clamp and load
dump protection circuit protect the devices
against transients on the Vcc pin (see ISO7637
transient compatibility table). These devices
integrate an analog current sense which delivers
a current proportional to the load current
(according to a known ratio) when CS_DIS is
driven low or left open. When CS_DIS is driven
high, the CURRENT SENSE pin is high
impedance. Output current limitation protects the
devices in overload condition. In case of long
duration overload, the devices limit the dissipated
power to a safe level up to thermal shut-down
intervention. Thermal shut-down with automatic
restart allows the device to recover normal
operation as soon as a fault condition disappears.
Max transient supply voltage V
CC
41V
Operating voltage range V
CC
4.5 to 27V
Max On-State resistance (per ch.) R
ON
4 mΩ
Current limitation (typ) I
LIMH
100A
Off state supply current I
S
2 μA
(1)
1. Typical value with all loads connected
MultiPowerSO-30
PQFN - 12x12 Power lead-less
Table 1. Devices summary
Package
Order codes
Tube Tape and Reel Tray
PQFN-12x12 Power lead-less - VND5004ATR-E VND5004A-E
MultiPowerSO-30 VND5004ASP30-E VND5004ASP30TR-E -
www.st.com
页面指南

VND810TR-E 数据手册 PDF

VND810TR-E 数据手册
ST Microelectronics
20 页, 197 KB
VND810TR-E 其它数据手册
ST Microelectronics
2 页, 1844 KB
VND810TR-E 应用笔记
ST Microelectronics
34 页, 801 KB

VND810 数据手册 PDF

VND810
数据手册
ST Microelectronics
Power Switch Hi Side 5A 16Pin SO Tube
VND810PTR-E
数据手册
ST Microelectronics
**2xHSS 160mOhm 36V SO-16 SMD **
VND810SP
数据手册
ST Microelectronics
Power Switch Hi Side 2Out 5A 0.16Ω 12Pin(10+2Tab) PowerSO Tube
VND810SP-E
数据手册
ST Microelectronics
Power Switch Hi Side 2Out 5A 0.16Ω Automotive 12Pin(10+2Tab) PowerSO Tube
VND810SPTR-E
数据手册
ST Microelectronics
Power Switch Hi Side 2Out 5A 0.16Ω Automotive 12Pin(10+2Tab) PowerSO T/R
VND810PEP-E
数据手册
ST Microelectronics
MOSFET DRVR 3.5A 2Out Hi Side Non-Inv 12Pin PowerSSO Tube
VND810TR-E
数据手册
ST Microelectronics
IC DRIVER HIGH SIDE 2CH 16-SOIC
VND81013TR
数据手册
ST Microelectronics
Power Switch Hi Side 5A 16Pin SO T/R
VND810PEPTR-E
数据手册
ST Microelectronics
MOSFET DRVR 3.5A 2Out Hi Side Non-Inv 12Pin PowerSSO T/R
VND810MSP-E
数据手册
ST Microelectronics
Power Switch Hi Side 2Out 0.6A 0.15Ω Automotive 12Pin(10+2Tab) PowerSO Tube
Datasheet 搜索
搜索
百芯智造数据库涵盖1亿多个数据手册,每天更新超过5,000个PDF文件。
相关文档: VND810 数据手册
在线联系我们
黄经理 - 百芯智造销售经理在线,5 分钟前
您的邮箱 *
消息 *
发送