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© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 7
1 Publication Order Number:
TIP3055/D
TIP3055 (NPN),
TIP2955 (PNP)
Complementary Silicon
Power Transistors
Designed for general−purpose switching and amplifier applications.
Features
• DC Current Gain −
h
FE
= 20−70 @ I
C
= 4.0 Adc
• Collector−Emitter Saturation Voltage −
V
CE(sat)
= 1.1 Vdc (Max) @ I
C
= 4.0 Adc
• Excellent Safe Operating Area
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage V
CEO
60 Vdc
Collector − Emitter Voltage V
CER
70 Vdc
Collector − Base Voltage V
CB
100 Vdc
Emitter − Base Voltage V
EB
7.0 Vdc
Collector Current − Continuous I
C
1 5 Adc
Base Current I
B
7.0 Adc
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
90
0.72
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.39 °C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
35.7 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 90 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
SOT−93 (TO−218)
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
