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数据手册 > IGBT,晶体管,绝缘栅双极型 > ST Microelectronics > STGP30H60DFB 数据手册PDF > STGP30H60DFB 应用笔记 第 1/35 页
STGP30H60DFB
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STGP30H60DFB 应用笔记 - ST Microelectronics

  • 制造商:
    ST Microelectronics
  • 分类:
    IGBT,晶体管,绝缘栅双极型
  • 封装
    TO-220-3
  • 描述:
    Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(3+Tab) TO-220AB Tube
更新时间: 2025-04-28 10:41:33 (UTC+8)

STGP30H60DFB 应用笔记

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September 2014 DocID026535 Rev 1 1/35
AN4544
Application note
IGBT datasheet tutorial
Introduction
This application note is intended to provide detailed explanations about parameters and
diagrams included in the datasheet of trench-gate field stop IGBTs offered in discrete
packages such as: TO-247, TO-220, D
2
PAK, etc. This document helps the user to better
understand the datasheet parameters and characteristics by explaining the interaction with
the influence of conditions as temperature or gate voltage.
Thanks to this application note the designer can also use the information included in
datasheet according to his needs.
Datasheet values, for dynamic characterization tests, refer to a specific testing setup with its
individual characteristics. Therefore, these values can vary according to the user's
application.
Most of the included diagrams, tables and explanations are related to the STGW40V60DF
datasheet. Concerning the latest version of datasheet for this product, please refer to our
website.
www.st.com

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STGP30H60 数据手册 PDF

STGP30H60DF
数据手册
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 150000mW 3Pin(3+Tab) TO-220 Tube
STGP30H60DFB
数据手册
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(3+Tab) TO-220AB Tube
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