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数据手册 > MOS管,场效应管,晶体管,金属氧化物,FET > ST Microelectronics > STD11N60M2-EP 数据手册PDF > STD11N60M2-EP 应用笔记 第 1/27 页

STD11N60M2-EP 应用笔记 - ST Microelectronics

  • 制造商:
    ST Microelectronics
  • 分类:
    MOS管,场效应管,晶体管,金属氧化物,FET
  • 封装
    TO-252-3
  • 描述:
    Trans MOSFET N-CH 600V 7.5A 3Pin(2+Tab) DPAK T/R
更新时间: 2025-06-17 15:19:52 (UTC+8)

STD11N60M2-EP 应用笔记

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March 2015 DocID025567 Rev 1 1/27
27
AN4406
Application note
MDmesh™ M2:
the new ST super-junction technology ideal for resonant topologies
Antonino Gaito, Giovanni Ardita, Cristiano Gianluca Stella
Introduction
Today, power supply designers are facing a new and exciting challenge: the necessity to
increase power density and efficient thermal management. A response to this challenge has
been found in resonant topologies that typically employ the LLC resonant converter.
In this topology, the parasitic capacitances of the MOSFETs can impact system behavior by
increasing switching losses and decreasing efficiency.
This application note provides the results of experimental performance analysis of the two
latest and most advanced ST MOSFET super-junction technologies, MDmesh™ M2 and
MDmesh™ M5, and compares them with well-known competitor devices in relation to
MOSFET parasitic capacitance.
www.st.com

STD11N60M2-EP 数据手册 PDF

STD11N60M2-EP 产品设计参考
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STD11N60M2-EP 产品设计图
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STD11N60M2-EP 应用笔记
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STD11N60M2-EP 产品封装文件
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STD11N60M2 数据手册 PDF

STD11N60M2-EP
产品设计参考
ST Microelectronics
Trans MOSFET N-CH 600V 7.5A 3Pin(2+Tab) DPAK T/R
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