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© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 13
1 Publication Order Number:
MMBTA42LT1/D
MMBTA42L, SMMBTA42L,
MMBTA43L
High Voltage Transistors
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Characteristic Symbol Value Unit
Collector−Emitter Voltage
MMBTA42, SMMBTA42
MMBTA43
V
CEO
300
200
Vdc
Collector−Base Voltage
MMBTA42, SMMBTA42
MMBTA43
V
CBO
300
200
Vdc
Emitter−Base Voltage
MMBTA42, SMMBTA42
MMBTA43
V
EBO
6.0
6.0
Vdc
Collector Current − Continuous I
C
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318
STYLE 6
2
3
1
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
1D M G
G
1D = MMBTA42LT, SMMBTA42L
M1E = MMBTA43LT
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAMS
1
M1E M G
G
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