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Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 7
1 Publication Order Number:
BCP68T1/D
BCP68T1G, SBCP68T1G
NPN Silicon
Epitaxial Transistor
This NPN Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT−223 package, which is designed for medium power surface
mount applications.
Features
High Current: I
C
= 1.0 A
The SOT−223 Package Can Be Soldered Using Wave or Reflow
SOT−223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
The PNP Complement is BCP69T1
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
C
= 25C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CEO
20 Vdc
Collector−Base Voltage V
CBO
25 Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current I
C
1.0 Adc
Total Power Dissipation @ T
A
= 25C
(Note 1)
Derate above 25C
P
D
1.5
12
W
mW/C
Operating and Storage Temperature
Range
T
J
, T
stg
−65 to 150 C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient (Surface Mounted)
R
q
JA
83.3 C/W
Lead Temperature for Soldering,
0.0625 in from case
Time in Solder Bath
T
L
260
10
C
Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
COLLECTOR 2,4
BASE
1
EMITTER 3
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
BCP68T1G SOT−223
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MARKING DIAGRAM
1,000/Tape & Reel
SOT−223
CASE 318E
STYLE 1
AYW
CA G
G
CA = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
BCP68T3G SOT−223
(Pb−Free)
4,000/Tape & Reel
SBCP68T1G SOT−223
(Pb−Free)
1,000/Tape & Reel
