RTF015N03
Transistors
1/2
2.5V Drive
Nch
MOS FET
RTF015N03
zStructure zExternal dimensions (Unit : mm)
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT3).
3) Low voltage drive (2.5V drive).
(1) Gate
zApplications
(2) Source
(3) Drain
TUMT3
0.3
0.77
0.17
0.15Max.
2.0
1.3
0.65 0.65
(3)
(1)
(2)
1.7 0.20.2
2.1
0~0.1
0.85Max.
Abbreviated symbol : PP
Switching
zPackaging specifications zInner circuit
(1) Gate
(2) Source
(3) Drain
∗2
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1
(2)
(1)
(3)
Package
Code
Taping
Basic ordering unit (pieces)
RTF015N03
TL
3000
Type
zAbsolute maximum ratings (Ta=25°C)
∗1
∗2
∗1
Parameter
VV
DSS
Symbol
VV
GSS
AI
D
AI
DP
AI
S
AI
SP
WP
D
°CTch
°CTstg
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
Continuous
Pulsed
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Source current
(Body diode)
30
150
−55 to +150
12
±1.5
±6.0
0.6
6.0
0.8
zThermal resistance
Parameter
°C/WRth(ch-a)
Symbol Limits Unit
Channel to ambient
156
∗ Mounted on a ceramic board
∗
