RTF010P02
Transistors
Rev.B 1/4
2.5V Drive
Pch
MOS FET
RTF010P02
zStructure
Silicon P-channel
MOS FET
zFeatures
1) Low on-resistance. (570mΩ at 2.5V)
2) High power package.
3) High speed switching.
4) Low voltage drive. (2.5V)
zApplications
DC-DC converter
zExternal dimensions (Unit : mm)
(1) Gate
(2) Source
(3) Drain
TUMT3
0.3
0.77
0.17
0.15Max.
2.0
1.3
0.65 0.65
(3)
(1)
(2)
1.7 0.20.2
2.1
0~0.1
0.85Max.
Abbreviated symbol : WQ
zPackaging specifications
Package
Code
Taping
Basic ordering unit (pieces)
RTF010P02
TL
3000
Type
zEquivalent circuit
(1) Gate
(2) Source
(3) Drain
∗2
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗1
(2)
(1)
(3)
zAbsolute maximum ratings (Ta=25°C)
∗1
∗2
∗1
Parameter
VV
DSS
Symbol
VV
GSS
AI
D
AI
DP
AI
S
AI
SP
WP
D
°CTch
°CTstg
Limits Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of Storage temperature
Continuous
Pulsed
Continuous
Pulsed
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Source current
(Body diode)
−20
±12
±1
±4
−0.4
−4
0.8
150
−55 to +150
zThermal resistance
Parameter
°C / W
Rth(ch-a)
Symbol Limits Unit
Channel to ambient
∗ Mounted on a ceramic board.
156
∗
