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PMEG3002AEB
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PMEG3002AEB 应用笔记 - NXP

  • 制造商:
    NXP
  • 分类:
    肖特基,二极管
  • 封装
    SOD-523
  • 描述:
    NXP PMEG3002AEB Small Signal Schottky Diode, Single, 30V, 200mA, 480mV, 1A, 125℃
更新时间: 2025-03-02 14:54:28 (UTC+8)

PMEG3002AEB 应用笔记

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Application Note
The PMEG1020EA and PMEG2010EA
MEGA Schottky diodes
Philips Semiconductors AN10230-01
Page 1 of 6
The PMEG1020EA and PMEG2010EA MEGA Schottky diodes-
a pair designed for high efficiency rectification
by Martin Lübbe
Introduction
Schottky diodes have found various applications in the fields of power supply and power management. Some
characteristic examples are reverse polarity protection, OR’ing circuits and switch mode power supplies. These
applications all exploit the reduced forward voltage V
F
at a given forward current I
F
as compared to standard pn-
switching diodes.
With the MEGA type range Philips launched a whole portfolio of novel Schottky diodes designed especially to
further improve the efficiency in the respective application.
The efficiency improvements are twofold: On the one hand the MEGA Schottkys are offered in small SMD
packages like SOD323 (SC-76), SOD523 (SC-79) or the brand new, ultra flat SOT666, allowing a more efficient use
of the available board space. On the other hand we developed novel production processes to further increase the
electrical performance of MEGA Schottkys in the medium power range up to a few Amps.
In the following we will present two diodes, which very clearly illustrate the idea behind the MEGA portfolio,
namely the PMEG1020EA and PMEG2010EA types. Both types are available in SOD323 (SC-76) and in the new
ultra flat SOT666 (extension EV instead of EA).
Main features
The main parameters of both diodes are summarized in Table 1 and typical forward and reverse characteristics can
be seen in Fig. 1.
Table 1: Electrical comparison of PMEG2010EA and PMEG1020EA MEGA Schottky diodes.
Conditions PMEG2010EA PMEG1020EA Unit
V
R
Continuous reverse voltage
- 20 10 V
I
F
Continuous forward current
- 1 2 A
V
F1
Forward voltage
I
F
= 1A 480 280 mV
V
F2
Forward voltage
I
F
= 2A - 350 mV
I
R1
Reverse current
V
R
= 8V 0.007 1 mA
I
R2
Reverse current
V
R
= 15V 0.01 - mA
C
D
Diode capacitance
V
R
= 5V 19 37 pF

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