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MMRF1015NR1 MMRF1015GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed forClass AorClassABpoweramplifierapplicationswith
frequencies up to 2000 MH z. Suitable f or analog and digital modulation and
multicarrier amplifier applications.
Typical Two--Tone Performance at 960 MHz: V
DD
=28Vdc,I
DQ
= 125 mA,
P
out
= 10 W PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — --37 dBc
Capable of Handling 10:1 VSWR @ 28 Vdc, 960 MHz, 10 W CW Output
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
On--Chip RF Feedback for Broadband Stability
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
225C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +68 Vdc
Gate--Source Voltage V
GS
--0.5, +12 Vdc
Storage Temperature Range T
stg
--65 to +150 C
Case Operating Temperature T
C
150 C
Operating Junction Temperature
(1,2)
T
J
225 C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 10 W PEP
R
JC
2.85 C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes -- AN1955.
Document Number: MMRF1015N
Rev. 0, 7/2014
Freescale Semiconductor
Technical Data
MMRF1015NR1
MMRF1015GNR1
1--2000 MHz, 10 W, 28 V
CLASS A/AB
RF POWER MOSFETs
T O -- 2 7 0 -- 2
PLASTIC
MMRF1015NR1
TO--270G--2
PLASTIC
MMRF1015GNR1
Note: Exposed backside of the package is
the source terminal for the transistor.
(Top View)
Drain
21
Figure 1. Pin Connections
Gate
Freescale Semiconductor, Inc., 2014.
A
ll rights reserved.
