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MMRF1014NT1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for Class A or Class AB power amplifier applications with
frequencies up t o 2000 MH z. Suitable for analog and digital modulation and
multicarrier amplifier applications.
Typical Two--Tone Performance @ 1960 MHz, 28 Vdc, I
DQ
=50mA,
P
out
= 4 W PEP
Power Gain — 18 dB
Drain Efficiency — 33%
IMD — --34 dBc
Typical Two--Tone Performance @ 900 MHz, 28 Vdc, I
DQ
=50mA,
P
out
= 4 W PEP
Power Gain — 19 dB
Drain Efficiency — 33%
IMD — --39 dBc
Capable of Handling 5:1 VSWR @ 28 Vdc, 1960 MHz, 4 W CW Output Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
On--Chip RF Feedback for Broadband Stability
Integrated ESD Protection
In Tape and Reel. T1 Suffix = 1,000 Units,16 mm Tape Width, 7--inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +68 Vdc
Gate--Source Voltage V
GS
--0.5, +12 Vdc
Storage Temperature Range T
stg
-- 65 to +150 C
Operating Junction Temperature T
J
150 C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76C, 4 W PEP, Two--Tone
Case Temperature 79C, 4 W CW
R
JC
8.8
8.5
C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 1C
Machine Model (per EIA/JESD22--A115) A
Charge Device Model (per JESD22--C101) IV
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes -- AN1955.
Document Number: MMRF1014N
Rev. 0, 7/2014
Freescale Semiconductor
Technical Data
MMRF1014NT1
1--2000 MHz, 4 W, 28 V
CLASS A/AB
RF POWER MOSFET
PLD--1.5
PLASTIC
Figure 1. Pin Connections
Note: The center pad on the backside of
the package is the source terminal
for the transistor.
Drain
Gate
Freescale Semiconductor, Inc., 2014.
A
ll rights reserved.
