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© Semiconductor Components Industries, LLC, 2010
June, 2010 − Rev. 3
Publication Order Number:
NSR30CM3T5G/D
1
NSR30CM3T5G
Preferred Device
Dual Common Cathode
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand−held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 V (Typ) @ I
F
= 10 mA
• This is a Pb−Free Device
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating
Symbol Value Unit
Reverse Voltage V
R
30 Volts
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
190
1.9
mW
mW/°C
Forward Current (DC) I
F
200 Max mA
Junction Temperature T
J
125 Max °C
Storage Temperature Range T
stg
−55 to +150 °C
Thermal Resistance
Junction−to−Ambient (Note 1)
R
JA
525 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 board with minimum mounting pad.
30 V
DUAL COMMON CATHODE
SCHOTTKY BARRIER
DIODES
Device Package Shipping
†
ORDERING INFORMATION
NSR30CM3T5G SOT−723
(Pb−Free)
8000/Tape & Reel
http://onsemi.com
SOT−723
CASE 631AA
STYLE 3
Preferred devices are recommended choices for future use
and best overall value.
MARKING
DIAGRAM
3
CATHODE
1
ANODE
2
ANODE
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
5C = Specific Device Code
D = Date Code
5C D
1
3
2
1
