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NSR0320MW2T3G 应用笔记 - ON Semiconductor

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NSR0320MW2T3G 应用笔记

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Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. 0
Publication Order Number:
NSR0320MW2T1/D
NSR0320MW2T1
Schottky Barrier Diode
These Schottky barrier diodes are designed for high current,
handling capability, and low forward voltage performance.
Low Forward Voltage − 0.24 Volts (Typ) @ I
F
= 10 mAdc
High Current Capability
ESD Rating − Human Body Model: CLASS 3B
− Machine Model: C
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating
Symbol Value Unit
Reverse Voltage V
R
20 Vdc
Peak Revese Voltage V
RM
23 V
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
200
2.0
mW
mW/°C
Forward Current (DC)
Continuous
I
F
1
A
Forward Current
t = 8.3 ms Half Sinewave
I
F
5
A
Junction Temperature T
J
125 Max °C
Storage Temperature Range T
stg
55 to +150 °C
RD = Specific Device Code
M = Date Code
MARKING
DIAGRAM
HIGH CURRENT
SCHOTTKY BARRIER DIODE
1
CATHODE
2
ANODE
Device Package Shipping
ORDERING INFORMATION
NSR0320MW2T1 SOD−323 3000/Tape & Reel
SOD−323
CASE 477
STYLE 1
http://onsemi.com
RD M
RD
M
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NSR0320MW2T3 SOD−323 10,000/Tape & Reel
NSR0320MW2T1G SOD−323 3000/Tape & Reel
NSR0320MW2T3G SOD−323 10,000/Tape & Reel
1
2
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