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© Semiconductor Components Industries, LLC, 2017
January, 2017 − Rev. 18
1 Publication Order Number:
NJD2873T4/D
NJD2873
Power Transistors
NPN Silicon DPAK For Surface Mount
Applications
Designed for high−gain audio amplifier applications.
Features
• High DC Current Gain
• Low Collector−Emitter Saturation Voltage
• High Current−Gain − Bandwidth Product
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Base Voltage V
CB
50 Vdc
Collector−Emitter Voltage V
CEO
50 Vdc
Emitter−Base Voltage V
EB
5 Vdc
Collector Current − Continuous I
C
2 Adc
Collector Current − Peak I
CM
3 Adc
Base Current I
B
0.4 Adc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
15
0.1
W
W/°C
Total Device Dissipation
@ T
A
= 25°C*
Derate above 25°C
P
D
1.68
0.011
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +175 °C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device Package Shipping
†
ORDERING INFORMATION
SILICON
POWER TRANSISTORS
2 AMPERES
50 VOLTS
15 WATTS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Device
DPAK
CASE 369C
STYLE 1
AYWW
J
2873G
www.onsemi.com
NJD2873T4G DPAK
(Pb−Free)
2,500
Units / Ree
l
NJVNJD2873T4G DPAK
(Pb−Free)
2,500
Units / Ree
l
1
1
BASE
3
EMITTER
COLLECTOR
2,4
2
3
4
