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MT48LC2M32B2P-7 应用笔记 - Micron

  • 制造商:
    Micron
  • 分类:
    RAM,芯片
  • 封装
    TSOP-2
  • 描述:
    DRAM Chip SDRAM 64Mbit 2Mx32 3.3V 86Pin TSOP-II Tray
更新时间: 2025-04-28 01:01:23 (UTC+8)

MT48LC2M32B2P-7 应用笔记

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Products and specifications discussed herein are subject to change by Micron without notice.
64Mb: x32 SDRAM
Features
PDF: 09005aef811ce1fe/Source: 09005aef811ce1d5 Micron Technology, Inc., reserves the right to change products or specifications without notice.
64MSDRAMx32_1.fm - Rev. J 12/08 EN
1 ©2001 Micron Technology, Inc. All rights reserved.
Synchronous DRAM
MT48LC2M32B2 – 512K x 32 x 4 banks
For the latest data sheet, refer to Micron’s Web site
Features
PC100 functionality
Fully synchronous; all signals registered on positive
edge of system clock
Internal pipelined operation; column address can be
changed every clock cycle
Internal banks for hiding row access/precharge
Programmable burst lengths: 1, 2, 4, 8, or full page
Auto precharge, includes concurrent auto precharge,
and auto refresh modes
Self refresh mode (not available on AT devices)
•Refresh
64ms, 4,096-cycle refresh (15.6µs/row)
(commercial, industrial)
16ms, 4,096-cycle refresh (3.9µs/row)
(automotive)
LVTTL-compatible inputs and outputs
Single +3.3V ±0.3V power supply
Supports CAS latency (CL) of 1, 2, and 3
Notes: 1. Off-center parting line.
2. Available on -6 and -7.
3. Contact Micron for product availability.
Options
Marking
•Configuration
2 Meg x 32 (512K x 32 x 4 banks) 2M32B2
•Plastic package OCPL
1
86-pin TSOP II (400 mil) TG
86-pin TSOP II (400 mil) Pb-free P
90-ball VFBGA (8mm x 13mm) Pb-free B5
Timing (cycle time)
5ns (200 MHz) -5
5.5ns (183 MHz) -55
6ns (166 MHz) -6
7ns (143 MHz) -7
•Die revision :G
Operating temperature range
Commercial (0° to +70°C) None
Industrial (–40°C to +85°C) IT
2
Automotive (–40°C to +105°C) AT
3
Notes: 1. FBGA Device Decode: http://
www.micron.com/support/FBGA/FBGA.asp
Part Number Example:
MT48LC2M32B2P-7:G
Table 1: Address Table
2 Meg x 32
Configuration
512K x 32 x 4 banks
Refresh count
4K
Row addressing
2K (A0–A10)
Bank addressing
4 (BA0, BA1)
Column addressing
256 (A0–A7)
Table 2: Key Timing Parameters
CL = CAS (READ) latency
Speed
Grade
Clock
Frequency
Access
Time
Setup
Time
Hold
TimeCL = 3
-5 200 MHz 4.5ns 1.5ns 1ns
-55 183 MHz 5ns 1.5ns 1ns
-6 166 MHz 5.5ns 1.5ns 1ns
-7 143 MHz 5.5ns 2ns 1ns
Table 3: 64Mb (x32) SDRAM Part Number
Part Number Architecture
MT48LC2M32B2TG
2 Meg x 32
MT48LC2M32B2P
2 Meg x 32
MT48LC2M32B2B5
1
2 Meg x 32

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